越来越多的近地轨道卫星集群正在改变选择高性能晶体振荡器的传统规则;新的Space振荡器为LEO集群提供了一种成本更低、可靠性高的解决方案
501JCA100M000BAF
Silicon晶振
Si501
100MHz
3.3V
±20ppm
501JCAM032768DAF
Silicon晶振
Si501
32.768kHz
3.3V
±20ppm
501HCAM032768DAF
Silicon晶振
Si501
32.768kHz
1.7 V ~ 3.6 V
±20ppm
501JCAM032768CAF
Silicon晶振
Si501
32.768kHz
3.3V
±20ppm
501BCAM032768BAF
Silicon晶振
Si501
32.768kHz
3.3V
±20ppm
501BCAM032768CAF
Silicon晶振
Si501
32.768kHz
3.3V
±20ppm
501BCAM032768CAG
Silicon晶振
Si501
32.768kHz
3.3V
±20ppm
500DLAA125M000ACF
Silicon晶振
Si500D
125MHz
2.5V
±150ppm
500DLAA200M000ACF
Silicon晶振
Si500D
200MHz
2.5V
±150ppm
510CBA100M000BAGR
Silicon晶振
*
-
-
-
510CBA125M000BAGR
Silicon晶振
*
-
-
-
510CBA25M0000BAGR
Silicon晶振
*
-
-
-
510GBA100M000BAGR
Silicon晶振
*
-
-
-
510GBA125M000BAGR
Silicon晶振
*
-
-
-
510GBA25M0000BAGR
Silicon晶振
*
-
-
-
510CBA100M000AAGR
Silicon晶振
*
-
-
-
510CBA125M000AAGR
Silicon晶振
*
-
-
-
510CBA25M0000AAGR
Silicon晶振
*
-
-
-
510GBA100M000AAGR
Silicon晶振
*
-
-
-
510GBA125M000AAGR
Silicon晶振
*
-
-
-
510CBA156M250BAGR
Silicon晶振
*
-
-
-
510GBA156M250BAGR
Silicon晶振
*
-
-
-
510CBA156M250AAGR
Silicon晶振
*
-
-
-
510GBA156M250AAGR
Silicon晶振
*
-
-
-
510CBA100M000BAG
Silicon晶振
*
-
-
-
510CBA125M000BAG
Silicon晶振
*
-
-
-
510GBA100M000BAG
Silicon晶振
*
-
-
-
510GBA125M000BAG
Silicon晶振
*
-
-
-
510GBA25M0000BAG
Silicon晶振
*
-
-
-
510CBA100M000AAG
Silicon晶振
*
-
-
-
510CBA125M000AAG
Silicon晶振
*
-
-
-
510CBA25M0000AAG
Silicon晶振
*
-
-
-
510GBA100M000AAG
Silicon晶振
*
-
-
-
510GBA125M000AAG
Silicon晶振
*
-
-
-
510ABA100M000BAGR
Silicon晶振
Si510
100MHz
3.3V
±25ppm
510ABA125M000BAGR
Silicon晶振
Si510
125MHz
3.3V
±25ppm
高性能晶体振荡器已经并将继续成为轨道卫星应用的支柱。太空景观——卫星所在的范围或轨道——不是一个统一的环境。地球同步(GEO)和中空(MEO)卫星的价值通常在数千万甚至数亿美元,预期寿命可达数十年。
510FBA100M000AAGR
Silicon晶振
Si510
100MHz
2.5V
±25ppm
510FBA125M000AAGR
Silicon晶振
Si510
125MHz
2.5V
±25ppm
511ABA100M000AAGR
Silicon晶振
Si511
100MHz
3.3V
±25ppm
511ABA125M000AAGR
Silicon晶振
Si511
125MHz
3.3V
±25ppm
511BBA100M000AAGR
Silicon晶振
Si511
100MHz
3.3V
±25ppm
511BBA125M000AAGR
Silicon晶振
Si511
125MHz
3.3V
±25ppm
511FBA100M000AAGR
Silicon晶振
Si511
100MHz
2.5V
±25ppm
511FBA125M000AAGR
Silicon晶振
Si511
125MHz
2.5V
±25ppm
510ABA106M250AAGR
Silicon晶振
Si510
106.25MHz
3.3V
±25ppm
510BBA106M250AAGR
Silicon晶振
Si510
106.25MHz
3.3V
±25ppm
510FBA106M250AAGR
Silicon晶振
Si510
106.25MHz
2.5V
±25ppm
511ABA106M250AAGR
Silicon晶振
Si511
106.25MHz
3.3V
±25ppm
511BBA106M250AAGR
Silicon晶振
Si511
106.25MHz
3.3V
±25ppm
511FBA106M250AAGR
Silicon晶振
Si511
106.25MHz
2.5V
±25ppm
510ABA000149AAGR
Silicon晶振
Si510
74.175824MHz
3.3V
±25ppm
510ABA74M2500AAGR
Silicon晶振
Si510
74.25MHz
3.3V
±25ppm
510BBA000149AAGR
Silicon晶振
Si510
74.175824MHz
3.3V
±25ppm
510BBA74M2500AAGR
Silicon晶振
Si510
74.25MHz
3.3V
±25ppm
510FBA000149AAGR
Silicon晶振
Si510
74.175824MHz
2.5V
±25ppm
510FBA74M2500AAGR
Silicon晶振
Si510
74.25MHz
2.5V
±25ppm
511ABA000149AAGR
Silicon晶振
Si511
74.175824MHz
3.3V
±25ppm
511ABA74M2500AAGR
Silicon晶振
Si511
74.25MHz
3.3V
±25ppm
511BBA000149AAGR
Silicon晶振
Si511
74.175824MHz
3.3V
±25ppm
511BBA74M2500AAGR
Silicon晶振
Si511
74.25MHz
3.3V
±25ppm
511FBA000149AAGR
Silicon晶振
Si511
74.175824MHz
2.5V
±25ppm
511FBA74M2500AAGR
Silicon晶振
Si511
74.25MHz
2.5V
±25ppm
510ABA156M250BAGR
Silicon晶振
Si510
156.25MHz
3.3V
±25ppm
510FBA156M250BAGR
Silicon晶振
Si510
156.25MHz
2.5V
±25ppm
511ABA156M250BAGR
Silicon晶振
Si511
156.25MHz
3.3V
±25ppm
511BBA156M250BAGR
Silicon晶振
Si511
156.25MHz
3.3V
±25ppm
因此,这些非常昂贵的系统要求所有组件都具有最高的可靠性。相比之下,LEO卫星集群由数百个价格便宜得多的设备组成,其使用寿命以年计。在许多此类应用中,完全符合空间要求的组件是不必要的,而且过于昂贵。
510BBA100M000BAGR
Silicon晶振
Si510
100MHz
3.3V
±25ppm
510BBA125M000BAGR
Silicon晶振
Si510
125MHz
3.3V
±25ppm
510FBA100M000BAGR
Silicon晶振
Si510
100MHz
2.5V
±25ppm
510FBA125M000BAGR
Silicon晶振
Si510
125MHz
2.5V
±25ppm
511ABA100M000BAGR
Silicon晶振
Si511
100MHz
3.3V
±25ppm
511ABA125M000BAGR
Silicon晶振
Si511
125MHz
3.3V
±25ppm
511BBA100M000BAGR
Silicon晶振
Si511
100MHz
3.3V
±25ppm
511BBA125M000BAGR
Silicon晶振
Si511
125MHz
3.3V
±25ppm
511FBA100M000BAGR
Silicon晶振
Si511
100MHz
2.5V
±25ppm
511FBA125M000BAGR
Silicon晶振
Si511
125MHz
2.5V
±25ppm
510ABA106M250BAGR
Silicon晶振
Si510
106.25MHz
3.3V
±25ppm
510BBA106M250BAGR
Silicon晶振
Si510
106.25MHz
3.3V
±25ppm
511ABA106M250BAGR
Silicon晶振
Si511
106.25MHz
3.3V
±25ppm
511BBA106M250BAGR
Silicon晶振
Si511
106.25MHz
3.3V
±25ppm
511FBA106M250BAGR
Silicon晶振
Si511
106.25MHz
2.5V
±25ppm
510ABA000149BAGR
Silicon晶振
Si510
74.175824MHz
3.3V
±25ppm
510ABA74M2500BAGR
Silicon晶振
Si510
74.25MHz
3.3V
±25ppm
510BBA000149BAGR
Silicon晶振
Si510
74.175824MHz
3.3V
±25ppm
510BBA74M2500BAGR
Silicon晶振
Si510
74.25MHz
3.3V
±25ppm
510FBA000149BAGR
Silicon晶振
Si510
74.175824MHz
2.5V
±25ppm
510FBA74M2500BAGR
Silicon晶振
Si510
74.25MHz
2.5V
±25ppm
511ABA000149BAGR
Silicon晶振
Si511
74.175824MHz
3.3V
±25ppm
511ABA74M2500BAGR
Silicon晶振
Si511
74.25MHz
3.3V
±25ppm
511BBA000149BAGR
Silicon晶振
Si511
74.175824MHz
3.3V
±25ppm
511BBA74M2500BAGR
Silicon晶振
Si511
74.25MHz
3.3V
±25ppm
511FBA000149BAGR
Silicon晶振
Si511
74.175824MHz
2.5V
±25ppm
511FBA74M2500BAGR
Silicon晶振
Si511
74.25MHz
2.5V
±25ppm
510CBA156M250BAG
Silicon晶振
*
-
-
-
510GBA156M250BAG
Silicon晶振
*
-
-
-
510CBA156M250AAG
Silicon晶振
*
-
-
-
510GBA156M250AAG
Silicon晶振
*
-
-
-
510ABA100M000AAGR
Silicon晶振
Si510
100MHz
3.3V
±25ppm
510ABA125M000AAGR
Silicon晶振
Si510
125MHz
3.3V
±25ppm
510BBA100M000AAGR
Silicon晶振
Si510
100MHz
3.3V
±25ppm
510BBA125M000AAGR
Silicon晶振
Si510
125MHz
3.3V
±25ppm
本文将深入探讨什么构成“空间合格”晶体振荡器以及基于空间景观位置的差异。本文还将尝试解决商用现货(COTS)晶体振荡器和微机电系统(MEMS)振荡器与新兴卫星星座应用中的新型空间晶体振荡器。
511FBA156M250BAGR
Silicon晶振
Si511
156.25MHz
2.5V
±25ppm
510ABA155M520BAGR
Silicon晶振
Si510
155.52MHz
3.3V
±25ppm
510BBA155M520BAGR
Silicon晶振
Si510
155.52MHz
3.3V
±25ppm
510FBA155M520BAGR
Silicon晶振
Si510
155.52MHz
2.5V
±25ppm
511ABA155M520BAGR
Silicon晶振
Si511
155.52MHz
3.3V
±25ppm
511BBA155M520BAGR
Silicon晶振
Si511
155.52MHz
3.3V
±25ppm
511FBA148M500BAGR
Silicon晶振
Si511
148.5MHz
2.5V
±25ppm
511FBA155M520BAGR
Silicon晶振
Si511
155.52MHz
2.5V
±25ppm
510ABA000110BAGR
Silicon晶振
Si510
148.35165MHz
3.3V
±25ppm
510ABA148M500BAGR
Silicon晶振
Si510
148.5MHz
3.3V
±25ppm
510BBA000110BAGR
Silicon晶振
Si510
148.35165MHz
3.3V
±25ppm
510BBA148M500BAGR
Silicon晶振
Si510
148.5MHz
3.3V
±25ppm
510FBA000110BAGR
Silicon晶振
Si510
148.35165MHz
2.5V
±25ppm
510FBA148M500BAGR
Silicon晶振
Si510
148.5MHz
2.5V
±25ppm
511ABA000110BAGR
Silicon晶振
Si511
148.35165MHz
3.3V
±25ppm
511ABA148M500BAGR
Silicon晶振
Si511
148.5MHz
3.3V
±25ppm
511BBA000110BAGR
Silicon晶振
Si511
148.35165MHz
3.3V
±25ppm
511BBA148M500BAGR
Silicon晶振
Si511
148.5MHz
3.3V
±25ppm
511FBA000110BAGR
Silicon晶振
Si511
148.35165MHz
2.5V
±25ppm
510ABA156M250AAGR
Silicon晶振
Si510
156.25MHz
3.3V
±25ppm
510BBA156M250AAGR
Silicon晶振
Si510
156.25MHz
3.3V
±25ppm
510FBA156M250AAGR
Silicon晶振
Si510
156.25MHz
2.5V
±25ppm
511BBA156M250AAGR
Silicon晶振
Si511
156.25MHz
3.3V
±25ppm
511FBA156M250AAGR
Silicon晶振
Si511
156.25MHz
2.5V
±25ppm
510ABA155M520AAGR
Silicon晶振
Si510
155.52MHz
3.3V
±25ppm
510BBA155M520AAGR
Silicon晶振
Si510
155.52MHz
3.3V
±25ppm
510FBA155M520AAGR
Silicon晶振
Si510
155.52MHz
2.5V
±25ppm
511ABA155M520AAGR
Silicon晶振
Si511
155.52MHz
3.3V
±25ppm
511BBA155M520AAGR
Silicon晶振
Si511
155.52MHz
3.3V
±25ppm
511FBA155M520AAGR
Silicon晶振
Si511
155.52MHz
2.5V
±25ppm
510ABA000110AAGR
Silicon晶振
Si510
148.35165MHz
3.3V
±25ppm
510ABA148M500AAGR
Silicon晶振
Si510
148.5MHz
3.3V
±25ppm
510BBA000110AAGR
Silicon晶振
Si510
148.35165MHz
3.3V
±25ppm
510BBA148M500AAGR
Silicon晶振
Si510
148.5MHz
3.3V
±25ppm
510FBA000110AAGR
Silicon晶振
Si510
148.35165MHz
2.5V
±25ppm
随着这些地区与地球的距离增加,电子元件的操作规范和测试标准变得更加严格。例如,如上述论文中所述:
510FBA148M500AAGR
Silicon晶振
Si510
148.5MHz
2.5V
±25ppm
511ABA000110AAGR
Silicon晶振
Si511
148.35165MHz
3.3V
±25ppm
511ABA148M500AAGR
Silicon晶振
Si511
148.5MHz
3.3V
±25ppm
511BBA000110AAGR
Silicon晶振
Si511
148.35165MHz
3.3V
±25ppm
511BBA148M500AAGR
Silicon晶振
Si511
148.5MHz
3.3V
±25ppm
511FBA000110AAGR
Silicon晶振
Si511
148.35165MHz
2.5V
±25ppm
511FBA148M500AAGR
Silicon晶振
Si511
148.5MHz
2.5V
±25ppm
511ABA25M0000BAGR
Silicon晶振
Si511
25MHz
3.3V
±25ppm
511ABA125M000AAG
Silicon晶振
Si511
125MHz
3.3V
±25ppm
510ABA200M000BAGR
Silicon晶振
Si510
200MHz
3.3V
±25ppm
510BBA200M000BAGR
Silicon晶振
Si510
200MHz
3.3V
±25ppm
510FBA200M000BAGR
Silicon晶振
Si510
200MHz
2.5V
±25ppm
511ABA200M000BAGR
Silicon晶振
Si511
200MHz
3.3V
±25ppm
511BBA200M000BAGR
Silicon晶振
Si511
200MHz
3.3V
±25ppm
511FBA200M000BAGR
Silicon晶振
Si511
200MHz
2.5V
±25ppm
510ABA212M500BAGR
Silicon晶振
Si510
212.5MHz
3.3V
±25ppm
510BBA212M500BAGR
Silicon晶振
Si510
212.5MHz
3.3V
±25ppm
510FBA212M500BAGR
Silicon晶振
Si510
212.5MHz
2.5V
±25ppm
511ABA212M500BAGR
Silicon晶振
Si511
212.5MHz
3.3V
±25ppm
511BBA212M500BAGR
Silicon晶振
Si511
212.5MHz
3.3V
±25ppm
511FBA212M500BAGR
Silicon晶振
Si511
212.5MHz
2.5V
±25ppm
510FBA200M000AAGR
Silicon晶振
Si510
200MHz
2.5V
±25ppm
510ABA200M000AAGR
Silicon晶振
Si510
200MHz
3.3V
±25ppm
510BBA200M000AAGR
Silicon晶振
Si510
200MHz
3.3V
±25ppm
511ABA200M000AAGR
Silicon晶振
Si511
200MHz
3.3V
±25ppm
511BBA200M000AAGR
Silicon晶振
Si511
200MHz
3.3V
±25ppm
511FBA200M000AAGR
Silicon晶振
Si511
200MHz
2.5V
±25ppm
510ABA212M500AAGR
Silicon晶振
Si510
212.5MHz
3.3V
±25ppm
510BBA212M500AAGR
Silicon晶振
Si510
212.5MHz
3.3V
±25ppm
510FBA212M500AAGR
Silicon晶振
Si510
212.5MHz
2.5V
±25ppm
太阳电离辐射暴露随着轨道高度的增加而增加,从而导致大气吸收/反射其影响的能力降低。设备承受操作性能和预期操作寿命的能力取决于设备承受终生总电离剂量(TID)的能力。空间越深,TID要求越高。
511ABA212M500AAGR
Silicon晶振
Si511
212.5MHz
3.3V
±25ppm
511BBA212M500AAGR
Silicon晶振
Si511
212.5MHz
3.3V
±25ppm
511FBA212M500AAGR
Silicon晶振
Si511
212.5MHz
2.5V
±25ppm
511SAA20M0000AAG
Silicon晶振
Si511
20MHz
1.8V
±50ppm
510BBA150M000BAG
Silicon晶振
Si510
150MHz
3.3V
±25ppm
511BCB125M000AAG
Silicon晶振
Si511
125MHz
3.3V
±20ppm
510FBA154M875AAG
Silicon晶振
Si510
154.875MHz
2.5V
±25ppm
510FBA157M625AAG
Silicon晶振
Si510
157.625MHz
2.5V
±25ppm
511ABA25M0000AAG
Silicon晶振
Si511
25MHz
3.3V
±25ppm
511JBA125M000AAG
Silicon晶振
Si511
125MHz
1.8V
±25ppm
510KCA100M000BAG
Silicon晶振
Si510
100MHz
1.8V
±20ppm
590AB70M6560DG
Silicon晶振
Si590
70.656MHz
3.3V
±25ppm
590FA200M000DG
Silicon晶振
Si590
200MHz
2.5V
±50ppm
590DA156M250DG
Silicon晶振
Si590
156.25MHz
3.3V
±50ppm
591BB300M000DG
Silicon晶振
Si591
300MHz
3.3V
±25ppm
550CD74M2500DGR
Silicon晶振
Si550
74.25MHz
3.3V
±50ppm
530CA28M6000DG
Silicon晶振
Si530
28.6MHz
3.3V
±50ppm
530AC125M000DGR
Silicon晶振
Si530
125MHz
3.3V
±7ppm
530BC125M000DGR
Silicon晶振
Si530
125MHz
3.3V
±7ppm
530EC125M000DGR
Silicon晶振
Si530
125MHz
2.5V
±7ppm
531AC125M000DGR
Silicon晶振
Si531
125MHz
3.3V
±7ppm
531BC125M000DGR
Silicon晶振
Si531
125MHz
3.3V
±7ppm
531EC125M000DGR
Silicon晶振
Si531
125MHz
2.5V
±7ppm
531FC125M000DGR
Silicon晶振
Si531
125MHz
2.5V
±7ppm
530AC106M250DGR
Silicon晶振
Si530
106.25MHz
3.3V
±7ppm
530BC106M250DGR
Silicon晶振
Si530
106.25MHz
3.3V
±7ppm
530EC106M250DGR
Silicon晶振
Si530
106.25MHz
2.5V
±7ppm
530FC106M250DGR
Silicon晶振
Si530
106.25MHz
2.5V
±7ppm
531AC106M250DGR
Silicon晶振
Si531
106.25MHz
3.3V
±7ppm
531BC106M250DGR
Silicon晶振
Si531
106.25MHz
3.3V
±7ppm
如上所述,Q-Tech晶体振荡器,无论资质等级如何,都是使用相同的生产工艺制造的。Q-Tech的所有振荡器都是在严格的洁净室污染控制下制造的。振荡器组装完成后,Q-Tech几乎可以在内部进行所有测试。对于振荡器的老化特性至关重要的应用,测试变得极为重要。
531EC106M250DGR
Silicon晶振
Si531
106.25MHz
2.5V
±7ppm
531FC106M250DGR
Silicon晶振
Si531
106.25MHz
2.5V
±7ppm
531FC25M0000DGR
Silicon晶振
Si531
25MHz
2.5V
±7ppm
530BC25M0000DGR
Silicon晶振
Si530
25MHz
3.3V
±7ppm
514GBB000118AAG
Silicon晶振
Si514
156.25MHz
2.5V
±25ppm
530RB150M000DG
Silicon晶振
Si530
150MHz
2.5V
±20ppm
530RB200M000DG
Silicon晶振
Si530
200MHz
2.5V
±20ppm
530BC100M000DG
Silicon晶振
Si530
100MHz
3.3V
±20ppm
530AC155M520DGR
Silicon晶振
Si530
155.52MHz
3.3V
±7ppm
530AC156M250DGR
Silicon晶振
Si530
156.25MHz
3.3V
±7ppm
530BC155M520DGR
Silicon晶振
Si530
155.52MHz
3.3V
±7ppm
530BC156M250DGR
Silicon晶振
Si530
156.25MHz
3.3V
±7ppm
530EC155M520DGR
Silicon晶振
Si530
155.52MHz
2.5V
±7ppm
530EC156M250DGR
Silicon晶振
Si530
156.25MHz
2.5V
±7ppm
530FC155M520DGR
Silicon晶振
Si530
155.52MHz
2.5V
±7ppm
530FC156M250DGR
Silicon晶振
Si530
156.25MHz
2.5V
±7ppm
531AC155M520DGR
Silicon晶振
Si531
155.52MHz
3.3V
±7ppm
531AC156M250DGR
Silicon晶振
Si531
156.25MHz
3.3V
±7ppm
531BC155M520DGR
Silicon晶振
Si531
155.52MHz
3.3V
±7ppm
531BC156M250DGR
Silicon晶振
Si531
156.25MHz
3.3V
±7ppm
531EC155M520DGR
Silicon晶振
Si531
155.52MHz
2.5V
±7ppm
531EC156M250DGR
Silicon晶振
Si531
156.25MHz
2.5V
±7ppm
531FC155M520DGR
Silicon晶振
Si531
155.52MHz
2.5V
±7ppm
531FC156M250DGR
Silicon晶振
Si531
156.25MHz
2.5V
±7ppm
530AC187M500DGR
Silicon晶振
Si530
187.5MHz
3.3V
±7ppm
530BC187M500DGR
Silicon晶振
Si530
187.5MHz
3.3V
±7ppm
530EC187M500DGR
Silicon晶振
Si530
187.5MHz
2.5V
±7ppm
530FC187M500DGR
Silicon晶振
Si530
187.5MHz
2.5V
±7ppm
531AC187M500DGR
Silicon晶振
Si531
187.5MHz
3.3V
±7ppm
531BC187M500DGR
Silicon晶振
Si531
187.5MHz
3.3V
±7ppm

SMI晶振,86M0368 -16,86SMX进口晶振,6G相关设备晶振
日本SMI晶体,53SMX石英晶振,53M320-16,6G基站晶振